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HL: Halbleiterphysik
HL 31: Quantenpunkte und -dr
ähte: Herstellung und Charakterisierung
HL 31.4: Talk
Wednesday, March 26, 2003, 15:15–15:30, BEY/154
In-vacuo x-ray diffraction and STM measurements on self-assembled InAs quantum dots — •Arne Bolz1, Theophilos Maltezopoulos1, Christian Kumpf2, Christian Meyer1, Christian Heyn1, Markus Morgenstern1, Robert L. Johnson3, and Wolfgang Hansen1 — 1Institut für Angewandte Physik, Universität Hamburg, Jungiusstraße 11, D-20355 Hamburg — 2Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg — 3Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg
Self-assembled MBE-grown InAs quantum dots have been investigated by grazing incidence x-ray diffraction (GIXRD) and scanning tunneling microscopy (STM) and spectroscopy (STS). To avoid contaminations and oxidation of the sample, a vacuum transfer system has been established that enables the transportation of samples between the growth chamber and GIXRD or STM set-up without breaking the vacuum. The strain, intermixing and size of the quantum dots has been analized by grazing incidence x-ray diffraction. These results were compared with topographic images from low-temperature scanning tunneling experiments. The energy levels of the InAs quantum dots were determined by scanning tunneling spectroscopy.