Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 31: Quantenpunkte und -dr
ähte: Herstellung und Charakterisierung

HL 31.4: Vortrag

Mittwoch, 26. März 2003, 15:15–15:30, BEY/154

In-vacuo x-ray diffraction and STM measurements on self-assembled InAs quantum dots — •Arne Bolz¹, Theophilos Maltezopoulos¹, Christian Kumpf², Christian Meyer¹, Christian Heyn¹, Markus Morgenstern¹, Robert L. Johnson³, and Wolfgang Hansen¹ — ¹Institut für Angewandte Physik, Universität Hamburg, Jungiusstraße 11, D-20355 Hamburg — ²Experimentelle Physik II, Universität Würzburg, Am Hubland, D-97074 Würzburg — ³Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg

Self-assembled MBE-grown InAs quantum dots have been investigated by grazing incidence x-ray diffraction (GIXRD) and scanning tunneling microscopy (STM) and spectroscopy (STS). To avoid contaminations and oxidation of the sample, a vacuum transfer system has been established that enables the transportation of samples between the growth chamber and GIXRD or STM set-up without breaking the vacuum. The strain, intermixing and size of the quantum dots has been analized by grazing incidence x-ray diffraction. These results were compared with topographic images from low-temperature scanning tunneling experiments. The energy levels of the InAs quantum dots were determined by scanning tunneling spectroscopy.