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HL: Halbleiterphysik

HL 31: Quantenpunkte und -dr
ähte: Herstellung und Charakterisierung

HL 31.6: Vortrag

Mittwoch, 26. März 2003, 15:45–16:00, BEY/154

Ga/In-Intermixing and Segregation during InAs Quantum Dot Formation — •Christian Heyn — Institut für Angewandte Physik, Jungiusstr. 11, 20355 Hamburg

Intermixing with Ga from the substrate and In over Ga segregation during strain-induced formation of InGaAs quantum dots are studied experimentally with electron diffraction (RHEED) and theoretically with a kinetic rate equations based growth model. Our growth model yields the temperature dependent critical time up to quantum dot formation. The results reproduce our RHEED data very well. Furthermore, the quantum dot volume calculated with the model agrees with independent measurements. Calculations of the time dependent strain energy inside the quantum dots establish strain-relaxation by quantum dot formation.