Dresden 2003 – scientific programme
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HL: Halbleiterphysik
HL 39: Ultrakurzzeitph
änomene I
HL 39.1: Talk
Thursday, March 27, 2003, 11:00–11:15, BEY/81
The carrier-wave Mollow triplet in GaAs — •T. Tritschler1, O. D. Mücke1, M. Wegener1, U. Morgner2, F. X. Kärtner3, G. Khitrova4, and H. M. Gibbs4 — 1Institut für Angewandte Physik, Wolfgang-Gaede-Straße 1, Universität Karlsruhe (TH), 76131 Karlsruhe — 2Institut für Hochfrequenztechnik und Quantenelektronik, Engesserstraße 5, Universität Karlsruhe (TH), 76131 Karlsruhe — 3Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, MIT, Cambridge, MA 02139, U.S.A. — 4Optical Sciences Center, University of Arizona, Tucson, AZ 85721, U.S.A.
Carrier-wave Rabi flopping refers to a Rabi oscillation, the frequency of which becomes comparable to the carrier frequency of light. Early experiments showed the characteristic splitting in the optical spectra around the third harmonic of the GaAs band gap energy. More recent theoretical analysis [1] has shown that these experiments on a GaAs/AlGaAs heterostructure were somewhat obscured by propagation effects. It was also shown that corresponding experiments on 20-100 nm thin samples are not only expected to be cleaner, but also expected to exhibit two novel aspects: i) three peaks around the third harmonic of the GaAs band gap energy corresponding to the carrier-wave Mollow triplet, and ii) a dependence on the carrier-envelope offset phase.
In this contribution we discuss corresponding simulations as well as experiments with 5 fs optical pulses tightly focused onto such thin films of GaAs. The measured spectrum exhibits three peaks around the third harmonic which are interpreted as the carrier-wave Mollow triplet.
[1] O. D. Mücke et al., Phys. Rev. Lett. 89, 127401 (2002)