Dresden 2003 – scientific programme
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HL: Halbleiterphysik
HL 4: GaN: Bauelemente
HL 4.2: Talk
Monday, March 24, 2003, 10:45–11:00, BEY/154
Gain spectra and current–induced change of refractive index in (In/Al)GaN diode lasers — •Ulrich T. Schwarz1, Evi Sturm1, Stefan Bader2, Andreas Weimar2, Volker Kümmler2, Georg Brüderl2, Alfred Lell2, and Volker Härle2 — 1Naturwissenschaftliche Fakultät II - Physik, Universität Regensburg, D-93040 Regensburg, Germany — 2OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany
Applying the method described by Hakki and Paoli to blue to near–uv (In/Al)GaN semiconductor laser diodes we are able to measure gain spectra of fully processed ridge laser diodes. For this method the laser diodes are being operated just below threshold, i.e. the current density is close to that encountered in lasing operation (in contrast to the high carrier density usually obtained in strip–length gain measurements). At the same time evaluation of the mode spacing allows the precise measurement of the refractive index in its dependency on current density. Both gain spectra and carrier density dependent refractive index will be compared with theoretical calculations known from literature.