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HL: Halbleiterphysik

HL 41: Quantenpunkte und -dr
ähte: Optische Eigenschaften II

HL 41.5: Vortrag

Donnerstag, 27. März 2003, 12:00–12:15, POT/81

Spectral hole burning of InGaAs/GaAs quantum dots — •Till Warming¹, F. Guffahrt¹, R. Heitz¹, C.M.A. Kapteyn¹, V.M. Ustinov², P. Brunkov², and D. Bimberg¹ — ¹Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany — ²A.F.Ioffe Physico-Technical Institute RAS, 194021 St-Petersburg, Russia

The spectrally selective saturation of MBE-grown self-organized InAs/GaAs quantum dots (QDs) is investigated. The QDs are embedded in p-i-n-structures allowing to control the electron and hole emission rates and, thus, the optical charging of resonantly excited QDs with one hole. The photocurrent spectrum reveals a sharp spectral hole at the energy of the laser excitation, since the absorption of the charged dots becomes non-resonant due to few-particle effects. The transition energy of the positively charged trion is blue shifted and leads to an enhanced photocurrent response on the high energy side of the spectral hole. The resonant excitation allows to resolve the acoustic phonon sidebands of the exciton transition. Temperature dependent measurements reveal a broadening and enhancement of the acoustic phonon sidebands.