Dresden 2003 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 42: Bauelemente I

HL 42.3: Talk

Thursday, March 27, 2003, 12:15–12:30, BEY/118

Evaluation of InAs/GaAs quantum-dot semiconductor optical amplifiers near 1300 nm for metropolitan area networks — •Matthias Lämmlin, Andrei Schliwa, and Dieter Bimberg — Institut für Festkörperphysik, Technische Universität Berlin

Due to a number of specific properties, i.e. high gain, small size and production cost, semiconductor optical amplifiers (SOAs) are expected to play an important role in future all-optical networks. However, conventional SOAs experience strong crosstalk, which eventually sets limits to the performance in WDM networks. Due to interband processes the dynamics of such devices is also limited by a typical relaxation time of 0.5 ns. The use of quantum dots (QDs) as an active medium in optoelectronic devices has been promoted since the realization of the first quantum dot laser. QDs offer potentially a small cross gain modulation in SOAs due to a weak or absent electronical coupling of the dots; and amplifier structures have shown an ultrafast gain recovery indicating the potential of QDs for metropolitan area networks. As a result, the interest in QD based SOAs has been growing and their main characteristics are now under examination. We report amplified spontaneous emission spectra and gain measurements on QD SOAs at 1260 nm. Near and far field calculations and measurements are presented and principle considerations on polarization issues of these devices are explained.