Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 42: Bauelemente I

HL 42.7: Vortrag

Donnerstag, 27. März 2003, 13:15–13:30, BEY/118

Ultrafast photodetectors fabricated on nitrogen implanted GaAs — •Martin Mikulics¹, Michel Marso¹, Mike Wolter¹, Peter Kordoš¹, Hans Lüth¹, Xuemei Zheng², Shuai Wu², Roman Sobolewski², Stanislav Stanček³, and Peter Kovač³ — ¹Institute of Thin Films and Interfaces - 1, Research Centre Jülich, Germany — ²Department of Electrical and Computer Engineering and the Laboratory for Laser Energetics, University of Rochester, USA — ³Slovak University of Technology, Department of Nuclear Physics and Technology, Bratislava, Slovakia

In this work we compare the properties of ultrafast metal-semiconductor-metal (MSM) photodetectors fabricated on high-energy nitrogen implanted GaAs and on LT-GaAs. Nitrogen-ions with energy of 700 keV and 880 keV, respectively, were implanted into GaAs at the ion concentration of ∼ 3· 10¹² cm⁻². We will show that the implanted GaAs photodetectors exhibit an improvement on both dark current and responsivity in comparison to photodetectors on LT-GaAs. With illumination of 100-fs-duration and 810-nm-wavelength laser pulses on the photodetectors, we recorded 2.7-ps-wide electrical transients. At dc bias of 9 V, the photoresponse voltage amplitude of the photodetector on 880 keV N⁺ implanted GaAs can reach ∼ 2 V, and this value is more than 50% higher than that of LT-GaAs photodetector operated under the same conditions. Our investigations show that photodetectors based on nitrogen ion implanted materials are promising for high speed and highly sensitive photodetectors, as an alternative to LT-GaAs devices.