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HL: Halbleiterphysik

HL 47: Pr
äparation/Charakterisierung

HL 47.2: Vortrag

Donnerstag, 27. März 2003, 15:15–15:30, BEY/154

Si accumulation at the surface upon reevaporation of Si-doped GaAs(100) — •Peter Kailuweit, Dirk Reuter, Peter Schafmeister, and Andreas Wieck — Ruhr-Universität Bochum, Lehrstuhl für Angewandte Festkörperphysik, Universitätsstraße 150, D-44780 Bochum

We studied the in-situ reevaporation of Si-doped GaAs(100) and subsequent overgrowth with GaAs. Using capacitance-voltage spectroscopy, we could observe an accumulation of free carriers at the interface between the original GaAs and the regrown material.

This is most likely due to an accumulation of the Si from the reevaporated layer in a region near the surface. This means, most of the Si is not desorbed during the reevaporation process.

We could estimate 1µ m as an upper limit for the lateral diffusion length during the reevaporation process from reevaporation experiments employing lateral resolved doping by focused ion beam implantation.