Dresden 2003 – scientific programme
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HL: Halbleiterphysik
HL 47: Pr
äparation/Charakterisierung
HL 47.3: Talk
Thursday, March 27, 2003, 15:30–15:45, BEY/154
Raman investigation of stress and phase transformation induced in silicon by indentation — •Simona Kouteva-Arguirova1, Valeri Orlov2,3, Winfried Seifert2, and Jürgen Reif1 — 1JointLab BTU/IHP and BTU Cottbus, LS Experimentalphysik II, Universitätsplatz 3-4, 03044 Cottbus — 2JointLab BTU/IHP and IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) — 3Institute of Solid State Physics of RAS, 142432 Chernogolovka, Moskow distr., Russia
Rockwell microindentations obtained with load 1.5 N were made on crystalline (100) silicon at temperatures ranging from 70 to 700 C . The residual stress field and the different structural states induced by loading were studied by mapping the indented zones by their micro-Raman response. The energy of the zone center phonon varies from 520 cm-1 when probing the silicon away from the indentation up to 525 cm-1 when probing the pileup region of the impression in the case of low temperatures. For indentations performed at high temperatures the Raman peak shift was smaller. The strain field of the indentation was determined by applying the relations between the optical phonon frequency and strain. Crystalline silicon phases (Si-III, Si-XII, Si-IV), as well as amorphous material were observed within the indentation contact area. The variety of crystal phases shows a tendency to diminish by higher temperatures pointing out that the transformation to other modifications is less likely.