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HL: Halbleiterphysik

HL 47: Pr
äparation/Charakterisierung

HL 47.5: Vortrag

Donnerstag, 27. März 2003, 16:00–16:15, BEY/154

Far-infrared magnetooptic Ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al_0.19Ga_0.33In_0.48P — •Tino Hofmann¹, Mathias Schubert¹, Craig Herzinger², and Ines Pietzonka³ — ¹Fakultät für Physik und Geowissenschaften, Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig — ²Department of Electrical Engineering, University of Nebraska-Lincoln, NE 68588 USA — ³Osram Opto Semiconductors, Wernerwerkstr. 2, 93049 Regensburg

Far-infrared magnetooptic generalized ellipsometry is used to determine the free-charge-carrier parameters effective mass m^∗=0.12(0.01) m₀, concentration N=6.7(0.2)× 10¹⁷cm⁻³, and mobility µ=339(15) cm²/Vs at room temperature for highly disordered n-type Al_0.19Ga_0.33In_0.48P grown lattice matched to an undoped GaAs substrate. The parameter are determined by modelling the observed magnetooptic birefringence originating from the far-infrared free-charge-carrier excitations in the Al_0.19Ga_0.33In_0.48P layer without the need for additional electrical measurements.