HL 47: Pr
äparation/Charakterisierung
Thursday, March 27, 2003, 15:00–16:15, BEY/154
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15:00 |
HL 47.1 |
Potential and dopant mapping at p-n junctions using scanning tunneling microscopy — •Nikos D Jäger, M Marso, K Urban, E R Weber, and Ph Ebert
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15:15 |
HL 47.2 |
Si accumulation at the surface upon reevaporation of Si-doped GaAs(100) — •Peter Kailuweit, Dirk Reuter, Peter Schafmeister, and Andreas Wieck
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15:30 |
HL 47.3 |
Raman investigation of stress and phase transformation induced in silicon by indentation — •Simona Kouteva-Arguirova, Valeri Orlov, Winfried Seifert, and Jürgen Reif
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15:45 |
HL 47.4 |
Synchrotron area diffractometry - a tool to study the spatial distribution of strain, lattice tilts and dislocation densities on a micrometer scale — •Daniel Lübbert, Petr Mikulik, Claudio Ferrari, Elena Villaggi, Nicola Verdi, Dusan Korytar, Petra Pernot, Lukas Helfen, and Tilo Baumbach
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16:00 |
HL 47.5 |
Far-infrared magnetooptic Ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P — •Tino Hofmann, Mathias Schubert, Craig Herzinger, and Ines Pietzonka
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