Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 49: Poster II

HL 49.25: Poster

Thursday, March 27, 2003, 16:30–19:00, HSZ/P2

Steady-state photocarrier grating technique for the determination of the minority-carrier diffusion length in microcrystalline silicon — •Rudolf Brüggemann and Oliver Kunz — Fachbereich Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg

Microcrystalline silicon is an interesting semiconductor for opto-electronic devices like solar cells. The majority-carrier properties can be determined by measuring the photocurrent. For the minority carriers, the steady-state photocarrier grating technique allows the determination of the diffusion length. We applied this technique over a wide temperature range for different photogeneration rates. The results indicate that band tails of the valence band are much steeper than in amorphous silicon.