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HL: Halbleiterphysik

HL 49: Poster II

HL 49.75: Poster

Donnerstag, 27. März 2003, 16:30–19:00, HSZ/P2

Examination of the charge storage of Si- and Ge nanoclusters in SiO₂ films by scanning probe techniques — •E. Beyreuther¹, R. Beyer¹, V. Beyer², J. v.Borany², and J. Weber¹ — ¹Technische Universität Dresden, Institut für Tieftemperaturphysik, Dresden, Germany — ²Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, Germany

Embedded Si or Ge nanoclusters in SiO₂ films might be a future alternative to conventional floating gate memories. Si or Ge implanted 20nm SiO₂ layers were annealed to generate nanoclusters with sizes of 3-4 nm.

The charge storage of the implanted layers was studied by scanning capacitance microscopy (SCM) and electrostatic force microscopy (EFM).

Local charge injections were accomplished by a biased conductive tip. The amount of the injected charge was estimated from the shifts of the local dC/dV curves acquired with scanning capacitance spectroscopy (SCS). The SCS data were compared with CV-measurements on planar MOS structures.

The decay of the SCM- and EFM-contrasts was monitored and the retention time was determined.