Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 49: Poster II

HL 49.78: Poster

Thursday, March 27, 2003, 16:30–19:00, HSZ/P2

Fabrication of quantum wires using a one step etch transfer of pattern prepared in a high resolution Calixarene and a conventional resist — •Michael Knop, Jean-Laurent Deborde, Ulrich Wieser, Saskia F. Fischer, and Ulrich Kunze — Lehrstuhl für Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum

We present a nanolithography technique based on the combination of high resolution electron beam lithography and conventional photolithography. The process starts with preparing the nanostructure. We use the negative electron resist Calixarene which is exposed to a 2 kV electron-beam. Subsequently optical lithography defines the coarse structure (leads, contacts) in a conventional positive resist. The designed pattern is transferred in a GaAs/AlGaAs-heterostructure by a single wet-chemical etching step. This reliable technique is applied to fabricate quantum wires with a width down to 50 nm and a length of few micrometers.

Additionally a 200 nm wide quantum wire can be divided lengthwise by means of atomic force microscope lithography [1] in two parallel coupled quantum wires. Using wet-chemical etching, we produce a 30 to 40 nm wide and several nm deep groove, which induces a potential barrier controlling the coupling between the two quantum wires.