Dresden 2003 – scientific programme
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HL: Halbleiterphysik
HL 49: Poster II
HL 49.84: Poster
Thursday, March 27, 2003, 16:30–19:00, HSZ/P2
Surfactant modified epitaxy of Si on CaF2/Si(111)
— •B.H. Müller, C. Wang, E. Bugiel, and K.R. Hofmann — Inst. für Halbleiterbauelemente und Werkstoffe, Appelstr 11a, 30167 Hannover
Epitaxial CaF2/Si heterostructures have attracted considerable interest due to their application potential for novel Si based devices. The epitaxial growth of CaF2 films on Si(111) has been extensively studied, while the growth of Si on CaF2, however, has been less investigated and is more difficult to achieve because the smaller surface free energy of CaF2 makes wetting of the CaF2 surface with Si energetically unfavorable. In this work we present the first investigation of the effects of the surfactant Sb on the epitaxial growth of Si on CaF2/Si(111) substrates. For comparison with the surfactant-modified growth method various conventional Si on CaF2/Si(111) growth techniques were employed. High temperature deposition results in the growth of 3D Si clusters. Deposition at room temperature with subsequent annealing steps improved the quality of the Si epilayers, but was accompanied by the formation of holes and trenches in the Si film. A surfactant- modified epitaxy method, where the room temperature Si deposition was followed by annealing under Sb flux resulted in continuous, smooth and epitaxial crystalline Si films, with a sharp (√3×√3)R30∘ surface reconstruction.