HL 4: GaN: Bauelemente
Montag, 24. März 2003, 10:30–12:15, BEY/154
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10:30 |
HL 4.1 |
pH response of GaN and AlGaN/GaN field effect transistors — •Georg Steinhoff, Martin Hermann, Stefan Geprägs, Martin Stutzmann, and Martin Eickhoff
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10:45 |
HL 4.2 |
Gain spectra and current–induced change of refractive index in (In/Al)GaN diode lasers — •Ulrich T. Schwarz, Evi Sturm, Stefan Bader, Andreas Weimar, Volker Kümmler, Georg Brüderl, Alfred Lell, and Volker Härle
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11:00 |
HL 4.3 |
Photoionization Spectroscopy on AlGaN/GaN HEMTs grown on sapphire and on silicon — •Mike Wolter, Peter Javorka, Michel Marso, Reinhard Carius, Hans Lüth, and Peter Kordoš
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11:15 |
HL 4.4 |
Photoreflectance studies of Ga- and N-face AlGaN/GaN heterostructures containing a polarisation induced 2DEG — •Andreas T. Winzer, R. Goldhahn, C. Buchheim, G. Gobsch, O. Ambacher, A. Link, M. Eickhoff, and M. Stutzmann
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11:30 |
HL 4.5 |
Effect of Transistor Geometry on DC and RF Performance of AlGaN/GaN HEMTs on Silicon Substrate — •Peter Javorka, Assadullah Alam, Michel Marso, Mike Wolter, Juraj Bernát, Alfred Fox, Michael Heuken, Peter Kordoš, and Hans Lüth
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11:45 |
HL 4.6 |
Femtosecond intersubband dynamics of electrons in AlGaN/GaN high-electron-mobility transistors — •Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W. J. Schaff, and L. F. Eastman
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12:00 |
HL 4.7 |
Simulation of polarization effects in AlN/GaN-based RTDs — •K. M. Indlekofer, E. Donà, M. Kočan, J. Malindretos, M. Bertelli, A. Rizzi und H. Lüth
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