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HL: Halbleiterphysik

HL 54: Bauelemente II

HL 54.3: Vortrag

Freitag, 28. März 2003, 12:15–12:30, BEY/81

Polarization anisotropy of InGaAs quantum dots — •Sebastian Bognár, F. Guffarth, T. Warming, D. Ouyang, R. Sellin, A. Schliwa, R. Heitz, and D. Bimberg — Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany

The three-dimensional confinement of the exciton changes in a Quantumdot the polarization selection rules, i.e. the oscillator strength for TE and TM polarized light. The corresponding oscillator strength is particularly important for in-plane opto-electronic devices like QD-based injection lasers, amplifiers and travelling wave detectors. The experimentally observed polarization anisotropy is smaller than predicted by eight-band k· p calculations accounting for the structural properties of the investigated QDs. Interestingly, the polarization anisotropy depends on the excitation, i.e. electrical injection or optical excitation, pointing to a decisive impact of lateral wave guide effects. The impact of the sample structure and the intrinsic polarization anisotropy of the self-organized InGaAs QDs will be discussed.