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HL: Halbleiterphysik
HL 6: Si/Ge
HL 6.1: Vortrag
Montag, 24. März 2003, 12:15–12:30, BEY/154
Ortho and para interstitial H2 in silicon — •E.V. Lavrov and J. Weber — Institut für Tieftemperaturphysik, Technische Universität Dresden, 01062 Dresden, Germany
A Raman scattering study of H2 trapped at the interstitial T site in Si is presented. Both ortho and para nuclear-spin states of H2 and D2 have been observed. It is shown that the Raman signals of H2 and D2 in the J=0 state, where J is the rotational quantum number, disappear preferentially from the spectra during laser excitation or prolonged storage at room tempeature in the dark. This surprising behavior is tentatively explained by different diffusion rates of H2 in the J=0 and J=1 states.