Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 9: Metall-Isolator-Überg
änge

HL 9.2: Vortrag

Montag, 24. März 2003, 15:30–15:45, BEY/118

Lateral correlation in self-assembled quantum dot layers probed by transport measurements — •Thomas Heinzel¹, Rainer Jaeggi², Klaus Ensslin², Sergio Ulloa³, Evaldo Ribeiro², and Pierre Petroff⁴ — ¹Universitaet Freiburg, Germany — ²ETH Zuerich, Switzerland — ³Ohio State University, USA — ⁴UCSB, USA

We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, Altshuler-Aronov-Spivak oscillations are observed. The presence of these oscillations correlates with the observation of a metal-insulator transition, and with the existence of a maximum in the electron mobility as a function of the electron density. These results indicate short-range ordering of the charged InAs dots.