Dresden 2003 – scientific programme

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MA: Magnetismus

MA 14: Poster: Schichten(1-31), Spinabh.Trsp.(32-47), Exch.Bias(48-54), Spindyn.(55-64), Mikromag.(65-76), Partikel(77-88), Oflmag.(89-92), Spinelektr.(93-98), Elektr.Theo.(99-103), Mikromag+PhasÜ+Aniso.(104-122), MagnMat.(123-134), Messm+Mol-Mag.(135-139), Kondo(140-151)

MA 14.26: Poster

Tuesday, March 25, 2003, 15:15–19:15, Zelt

Thin film epitaxy of Fe₃O₄ on Si(001) by pulsed layer deposition using a TiN/MgO buffer layer — •D. Reisinger, M. Schonecke, M. Opel, A. Erb, L. Alff, and R. Gross — Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Str. 8, 85748 Garching

Epitaxy of oxide materials on silicon (Si) substrates is of great interest for future functional devices using the large variety of physical properties of the oxides as ferroelectricity, ferromagnetism, or superconductivity. Recently, materials with high spin polarisation of the charge carriers have become interesting for semiconductor-oxide hybrid devices in spin-electronics. Here we report on pulsed laser deposition of magnetite (Fe₃O₄) on Si(001) cleaned by an in situ laser beam high temperature treatment. After depositing a double buffer layer of titanium nitride (TiN) and magnesium oxide (MgO), a high quality epitaxial magnetite layer can be grown as verified by RHEED intensity oscillations and high resolution x-ray diffractometry.