Dresden 2003 – scientific programme

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MA: Magnetismus

MA 14: Poster: Schichten(1-31), Spinabh.Trsp.(32-47), Exch.Bias(48-54), Spindyn.(55-64), Mikromag.(65-76), Partikel(77-88), Oflmag.(89-92), Spinelektr.(93-98), Elektr.Theo.(99-103), Mikromag+PhasÜ+Aniso.(104-122), MagnMat.(123-134), Messm+Mol-Mag.(135-139), Kondo(140-151)

MA 14.27: Poster

Tuesday, March 25, 2003, 15:15–19:15, Zelt

Comparison between Fe₃O₄ thin film properties on Si and MgO substrates — •Petra Majewski, Daniel Reisinger, Barbara Blass, Mitja Schonecke, Jan B. Philipp, Andreas Erb, Lambert Alff, Matthias Opel, and Rudolf Gross — Walther-Meißner-Institut, Bayerische Akademie der

Currently, most spintronic devices are based on metallic systems. However, it is of great interest to establish spintronic devices based on semiconductors in order to make use of both their specific physical advantages and the well-established semiconductor technology. To reach this goal, it becomes necessary to produce and inject spin-polarized currents into semiconductors using ferromagnetic contact materials with high spin polarization at room temperature. Magnetite (Fe₃O₄) with a Curie temperature of approx. 850^∘C is predicted to show a high effective spin polarization of the charge carriers near the Fermi level even at room temperature. In order to study the electric and magnetic properties of epitaxial thin films of Fe₃O₄ on Si substrates, these films have been characterized using x-ray diffraction, magnetotransport measurements and SQUID magnetometry. We compare the results to those obtained from Fe₃O₄ grown on MgO substrates.