Dresden 2003 – scientific programme

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MA: Magnetismus

MA 24: Hauptvortr
äge Brückl / Bangert

MA 24.2: Invited Talk

Thursday, March 27, 2003, 14:30–15:00, HSZ/04

Magneto-resistive Logic — •Joachim Bangert¹, Joachim Wecker¹ und Christian Siemers² — ¹Siemens AG; CT MM 1; Paul Gossen Str. 100; 91052 Erlangen — ²Fachhochschule Nordhausen; Technische Informatik; Weinberghof 4; 99734 Nordhausen

The giant and tunnel magneto-resistive (GMR and TMR) effects originate from spin dependent transport in magnetic thin film structures. They have enabled a variety of recent innovations in information technology: GMR sensors detect the data stored on modern hard disks while TMR cells will be used to simultaneously store and read out the information in future non-volatile semiconductor memory, MRAM./par A promising new application for magneto-resistive technology is logic data processing. In this talk the main ideas for a realisation of logic functions with current MR technologies are explained. Their introduction allows to improve the efficiency of logic circuits. Especially configurable circuits will profit from the inherent benefits of MR structures./par First experimental results for configurable logic gates built from TMR cells are presented. Anticipated advantages will be discussed as well as challenges that remain to be solved./par /par This project is partly funded by the BMBF (grant No. 13N8208)./par