Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 15: Elektronische Struktur III
O 15.2: Vortrag
Dienstag, 25. März 2003, 11:30–11:45, HSZ/02
Electronic Structure of the Single Domain Si(111)–(3×1)–Li Surface — •C. Bromberger1, J.N. Crain2, K.N. Altmann2, J.J. Paggel3, F.J. Himpsel2, and D. Fick1,2 — 1Philipps-Universität, Fachbereich Physik and Zentrum für Materialwissenschaften, D-35032 Marburg, Germany — 2Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA — 3Freie Universität Berlin, Institut für Experimentalphysik I, D-14195 Berlin, Germany
The band structure of the single domain Si(111)-(3×1)-Li surface is investigated by angular resolved photoelectron spectroscopy (ARPES) with synchrotron radiation. Vicinal surfaces are used as templates for obtaining a single domain (3×1) reconstruction. The surface band structure consists of a single, well-pronounced state at about 0.9 eV below the valence band maximum. Its dispersion matches local density calculations for the honeycomb chain channel (HCC) structure, but the calculated energy is 0.31 eV too high. This shift is reminiscent of localized surface states on other silicon surfaces, such as Si(111)-H.
Supported by the Deutsche Forschungsgemeinschaft (DFG), Bonn.