Dresden 2003 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

O: Oberflächenphysik

O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)

O 24.1: Poster

Mittwoch, 26. März 2003, 14:30–17:30, P1

Geometric and electronic structure of epitaxial PbS on TiS₂ — •Alf Kamenz, Rainer Kunz, Julia Brandt, Lutz Kipp und Michael Skibowski — Institut für Experimentelle und Angewandte Physik, Universität Kiel, 24098 Kiel, Germany

In the context of understanding the stability and bonding in misfit layered compounds we created a similar system by producing epitaxial thin films of PbS on a TiS₂ transition metal dichalcogenide substrate. In the respective misfit compound (PbS)_1.18TiS₂ sandwich layers of TiS₂ are stacked alternately with two-atomic layers of the monochalcogenide PbS. Since both subsystems exhibit different properties in view of their electronic behavior as well as the geometric symmetry at the interface the origin of their high stability and perfect stacking order is not fully understood yet. The comparison of electronic properties of misfit compounds with epitaxial PbS films on TiS₂ yields valuable information about bonding mechanisms in both systems. Epitaxial thin films of PbS on TiS₂ substrates were produced by molecular beam epitaxy and characterized by scanning tunneling microscopy and low energy electron diffraction in view of their geometric structure. Extensive studies on their electronic structure were carried out by angle-resolved photoelectron spectroscopy with synchrotron radiation. This work was supported in parts by BMBF proj. no. 05 KS1 FKB and DFG Forschergruppe DE 412/21-2.