Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)
O 24.17: Poster
Mittwoch, 26. März 2003, 14:30–17:30, P1
Modification of the growth properties of Cu on Ni(111) by a preadsorbed water layer investigated by scanning tunneling microscopy — •Reinhard Lindner1, Georg Held2, Florian Maier1, and Hans-Peter Steinrück1 — 1Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstraße 3, D-91058 Erlangen — 2University of Cambridge, Department of Chemistry, Lensfield Road, Cambridge CB2 1EW, UK
Small amounts of copper (0.05 ML < Θ Cu < 1.5 ML) were deposited onto a Ni(111) surface at a substrate temperature of 100 K using an electron beam evaporator source. The deposition was performed on the clean surface and on the surface precovered with a water layer (∼ 100 ML). In addition, Cu was also evaporated onto the clean surface with the sample at a bias voltage of +600 V, in order to repell or slow down the small fraction of high energetic Cu-ions that stem from the source and may induce surface defects. In each case the sample was heated to room temperature after the deposition and the number and size distribution of the clusters were investigated using scanning tunneling microscopy. For the three preparation procedures significant differences in size and morphology of the Cu islands were observed. For deposition of Cu on the water film, we observe larger islands with a narrow size distribution, as compared to the situation for the clean surface.