Dresden 2003 – wissenschaftliches Programm

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O: Oberflächenphysik

O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)

O 24.26: Poster

Mittwoch, 26. März 2003, 14:30–17:30, P1

Electronic Structure and Electron-Phonon Interaction on Bi(100) — •Philip Hofmann, Julio Esteban Gayone, Søren Vrønning Hoffmann, and Zheshen Li — Institute for Storage Ring Facilities, Aarhus University, DK-8000 Aarhus C

The electronic structure of the pseudo-hexagonal Bi(100) surface was determined by high-resolution angle-resolved photoemission with synchrotron radiation. Bi(100) supports several surface states crossing the Fermi level with velocities much smaller than in bulk Bi. This causes the surface to be a considerably better metal than the bulk. The surface Fermi surface consists of a small electron pocket around the centre of the surface Brillouin zone and hole pockets along the direction of the mirror plane. We compare our results to the electronic structure of other Bi surfaces, in particular to Bi(111), the truly hexagonal surface. We also discuss the temperature-dependence of the surface state linewidth and determine the strength of the electron-phonon interaction.