Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)
O 24.30: Poster
Mittwoch, 26. März 2003, 14:30–17:30, P1
Epitaxial iron silicides on Si(111): surface electronic structure studied by photoelectron spectroscopy — •D. Borgmann1, M. Probst1, F. Maier1, R. Denecke1, M. Kinne1, H.-P. Steinrück1, M. Straß2, M. Bockstedte2, and O. Pankratov2 — 1Physikalische Chemie II, Univ. Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen — 2Theoretische Festkörperphysik, Univ. Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen
Annealing of ultrathin iron films (10-16 Å) deposited on a Si(111)-(7x7) surface yields two metastable epitaxial iron silicide layers as witnessed in low energy electron diffraction (LEED): a (1x1) and a (2x2) phase that are formed at 570 and 820 K, respectively. In each case, high-resolution X-ray photoelectron spectroscopy (HRXPS) points to a surface termination with silicon.
For the two phases, angle-resolved UV photoelectron spectroscopy (ARUPS) data, taken at BESSY I, are presented. In the narrow photon energy range of 20-24 eV, an occupied surface state is unambiguously detected for the (1x1) phase. Its dispersion shows good agreement with first principle calculations of a silicon terminated FeSi(111)-(1x1) surface. Moreover, the measured surface band structure of the (2x2) phase will be discussed in terms of a FeSi2 calcium fluorite structure.