Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)
O 24.74: Poster
Mittwoch, 26. März 2003, 14:30–17:30, P1
Chain formation of para-sexiphenyl crystallites on mica(001) — •G. Hlawacek1, C. Teichert1, A. Andreev2, H. Sitter2, G. Matt3, and N. S. Sariciftci3 — 1Dept. of Physics, University of Leoben, A-8700 Leoben, Austria — 2Institut for Semiconductor and Solid State Physics, University of Linz, A-4040 Linz, Austria — 3Linz Inst. f. Organic Solar Cells, Physical Chemistry, University of Linz, A-4040 Linz, Austria
High-resolution atomic force microscopy is used to study the initial growth stage in hot wall epitaxy of para-sexiphenyl on mica (001). This stage is characterized by a coexistence of nanometer scale crystallites and self-organized crystallite chains with micrometer length [1]. These chains are well oriented and exhibit a very narrow length distribution. They form spontaneously as soon as a critical density of crystallites is present on the surface. Average chain length as well as chain density increase with longer growth times whereas annealing mainly results in a length growth of existing chains. [1] N.S. Sariciftci, et. al. Thin Solid Films,403-404 (2002) 444.