Dresden 2003 – wissenschaftliches Programm

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O: Oberflächenphysik

O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)

O 24.78: Poster

Mittwoch, 26. März 2003, 14:30–17:30, P1

An in situ investigation of the growth kinetics of an octadecylsiloxane monolayer on oxidized silicon: Indications for a two-step mechanism — •Daniel Dahlhaus, Nils Hartmann, and Eckart Hasselbrink — Fachbereich Chemie, Universität Essen, Universitätsstraße 5, 45141 Essen, Germany

The growth kinetics of an octadecylsiloxane monolayer on an oxidized silicon surface during immersion in an octadecyltrichlorosilane (OTS) solution has been monitored for various water contents using a quartz crystal microbalance (QCM). With increasing water content of the solution, the overall growth kinetics appears to accelerate. While previous in situ investigations based on infrared and X-ray reflectivity spectroscopy indicate an overall growth of the alkylsiloxane monolayer according to a first-order Langmuir adsorption kinetics [1, 2], our measurements suggest a growth kinetics based on a two-step mechanism including a fast and a slow process.

[1] T. Vallant, J. Kattner, H. Brunner, U. Mayer and H. Hoffmann, Langmuir 15 (1999) 5339.

[2] A. G. Richter, C.-J. Yu, A. Datta, J. Kmetko and P. Dutta, Phys. Rev. E 61 (2000) 607.