Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 31: Organische Dünnschichten II
O 31.1: Vortrag
Donnerstag, 27. März 2003, 15:00–15:15, HSZ/02
The surface engineering of GaAs with functionalized aromatic monolayers — •Andrey Shaporenko1, Klaus Adlkofer2, Lars S. O. Johansson3, Motomu Tanaka2, Michael Zharnikov1, and Michael Grunze1 — 1Angewandte Physikalische Chemie, Universität Heidelberg,D-69120 Heidelberg, Germany — 2Lehrstuhl für Biophysik E22, Technische Universität München, D-85748, Garching b. München, Germany — 3Department of Physics, Karlstad University, S-65188 Karlstad, Sweden
Stoichiometric GaAs (100) surfaces were functionalized with monolayers of an aromatic compound, 1,1’-biphenyl-4-thiol (BPT), and the engineered surfaces were studied by synchrotron-based high resolution x-ray photoelectron spectroscopy and near edge x-ray absorption fine structure spectroscopy. BPT molecules were found to form well ordered and densely packed self-assembled monolayer on these substrates. The attachment to the substrate occurs over the thiolate headgroup while the intact biphenyl moieties have an upright orientation with an average tilt angle of 31.50 . The functionalization of GaAs by BPT was found to prevent an oxidation and contamination of the substrate, keeping the GaAs surface in a pristine state. The surface engineering of GaAs can provide a crucial link for combining GaAs-based semiconductor nanostructures with bio-organic molecular assemblies.