Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 31: Organische Dünnschichten II
O 31.11: Vortrag
Donnerstag, 27. März 2003, 17:30–17:45, HSZ/02
Growth of DIP Thin Films on Stepped Sapphire Surfaces — •J. O. Ossó1,2, E. Barrena1, F. Schreiber1,3,4, M. Garriga2, M. I. Alonso2, and H. Dosch1,4 — 1Max-Planck-Institut für Metallforschung, 70569 Stuttgart, Germany — 2Institut de Ciència de Materials de Barcelona CSIC, 08190 Bellaterra, Spain — 3Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford OX13QZ, UK — 4Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 70550 Stuttgart, Germany
The development of organic semiconductor thin films with good charge transport properties requires the achievement of highly ordered structures. As shown recently [1], the growth on vicinal surfaces offers a path towards the achivement of single crystalline organic thin films. We present a study of the growth, structure, and optical properties of highly ordered organic thin films of diindenoperylene (DIP) on vicinal Al2O3 (1120) surfaces. The nucleation of the organic films at the step edges is investigated at different growth stages by atomic force microscopy (AFM). When surface diffusion is enhanced, large crystallites are obtained, all oriented in one azimuthal direction. High resolution AFM images allow to determine the in-plane structure of the film and their orientation relative to the substrate. Interestingly, when two facet steps join to form a single one, spiral growth is observed in the molecular film. The preferred orientation of the films facilitates the study of the intrinsic structural and optical properties of this system.
[1] Ossó et al., Adv. Funct. Mat. 12 (2002) 455