Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 32: Epitaxie und Wachstum II
O 32.13: Vortrag
Donnerstag, 27. März 2003, 18:00–18:15, FOE/ANOR
Effect of mesoscopic relaxation on diffusion of Co adatoms on Cu(111) — •D.V. Tsivlin1,2, V.S. Stepanyuk3, W. Hergert1, and J. Kirschner3 — 1Fachbereich Physik, Martin-Luther-Universität, Halle-Wittenberg, Friedemann-Bach-Platz 6, D-06099 Halle, Germany — 2Solid State Physics Department, Moscow State University, 119992 Moscow, Russia — 3Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
Atomistic description of epitaxial growth is a continuing challenge for modern physics and technology. In the submonolayer regime fundamental parameters such as diffusion barriers and adsorbate-adsorbate binding energies are usually extracted from island density data. Our recent studies[1] revealed that the strain relaxation in mesoscopic islands has a strong impact on the substrate morphology.
In this work we demonstrate that mesoscopic relaxation at surfaces with low diffusion barriers significantly affects atomic motion in the vicinity of adsorbed islands. Atomic scale calculations for Co islands on Cu(111) show that adsorbate - induced strain in the substrate makes surface diffusion of Co adatom anisotropic. As a result large energy barriers exist for the attachment of adatoms to islands.
[1] V.S. Stepanyuk, D.I. Bazhanov, A.N. Baranov, W. Hergert, P.H. Dederichs, J. Kirschner, Phys. Rev. B 62 (2000) 15398; O.V. Lysenko, V.S. Stepanyuk, W. Hergert, J. Kirschner, Phys. Rev. Lett. 89 (2002) 126102.