Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 32: Epitaxie und Wachstum II
O 32.2: Vortrag
Donnerstag, 27. März 2003, 15:15–15:30, FOE/ANOR
Epitaxial growth of metals studied by monitoring the optical anisotropy — •L. D. Sun1, M. Hohage1, S. H. Kim1, P. Zeppenfeld1, and RE. Balderas-Navarro2 — 1Institute of Experimental Physics, Johannes-Kepler University Linz, A-4040 Linz, Austria — 2Facultad de Ciencias and IICO, Universidad Autonoma de San Luis Potosi, San Luis Potosi, SLP 78000, Mexico
Reflectance Difference Spectroscopy (RDS) has been used to study the growth behaviour of Cu and Co on Cu(110). By measuring the RDS intensity at 4.3 eV, which is contributed by the bulk related transitions at the high symmetry point L, the epitaxial growth is monitored in real time. It shows a regularly spaced oscillation during the deposition of Cu on an oxygen pe-covered Cu(110) surface at 210 K, indicating layer-by-layer growth. Also for Co on the Cu(110)-(2x1)O similiar layer-by-layer oscillations of the RDS intensity at 4.3 eV have been observed during growth at 350 K. These results fit very well with data obtained with He atom scattering from TEAS and STM. The oscillatory RDS intensity can be related to the strain modulation in the surface-near region during growth. The results fit very well with data from TEAS and STM studies. It is demonstrated that RDS can be used as a powerful tool to study metal growth on anisotropic substrates.