Dresden 2003 – wissenschaftliches Programm

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O: Oberflächenphysik

O 32: Epitaxie und Wachstum II

O 32.4: Vortrag

Donnerstag, 27. März 2003, 15:45–16:00, FOE/ANOR

Morphology of the Si/ZnO Interface — •Christian Pettenkofer and Ulrich Meier — Hahn-Meitner-Institut Glienicker str 100 14109 Berlin

The interface properties of the system ZnO/Si were studied with XPS and UPS with respect to the morphology and the electronic properties of magnetron sputtered ZnO films on Si(111) surfaces (H-termination and 7x7,Si-ox). Beside a sputter process induced initial oxidation of the Si substrate an intermixed Zn2SiO4 like phase was detected in addition to a reduced Zn species in the interface. The appearance of Zn depends sensitively on the substrate-bias potential and the oxygene partial pressure. All investigated films contained a considerable amount of hydrogen which was found to be in a hydroxide configuration. Zn-OH phases were found to be removed by annealing the samples. Tentatevly a second hydroxide phase restricted to the surface will be discussed. A model of the complex interface structure will be given on the basis of spectroscopic results. ZnO films deposited from DET-H2O form in contrast an abrupt interface still containing -OH. Implications on the bandoffset will be discussed.