Dresden 2003 – wissenschaftliches Programm

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O: Oberflächenphysik

O 37: Rastersondentechniken III

O 37.2: Vortrag

Freitag, 28. März 2003, 11:30–11:45, HSZ/02

Dielectric Breakdown of SiO₂ and its Effect on the Surface Morphology Studied by Conducting Atomic-Force Microscopy — •Sascha Kremmer, Sven Peißl, Christian Teichert, and Friedemar Kuchar — Department of Physics, University of Leoben, A-8700 Leoben, Austria

The Conducting Atomic-Force Microscope (C-AFM) is a valuable tool for nanometer scale investigations on the dielectric breakdown of very thin silicon oxide films [1]. In this work first the modifications of the oxide surface and passivation effects between the sample and the boron doped diamond coated AFM tip used here are studied. Therefore, measurements under ambient conditions are compared to similar experiments in ultra-high vacuum. From the results obtained for different experimental conditions we conclude that the water film, which is always present on the silicon oxide surface under ambient conditions, plays an important role during the modification process.

Second, the propagation of the dielectric breakdown is investigated by C-AFM. For this purpose local dielectric breakdown is caused by applying voltage ramps between the tip and the sample on different spots. Afterwards, a two-dimensional tunnelling current image is recorded across the breakdown location, yielding information on the propagation of the electric oxide weakening caused by dielectric breakdown.

[1] S. Kremmer, C. Teichert, E. Pischler, H. Gold, F. Kuchar, M. Schatzmayr, Surf. and Interf. Anal. 33(2), 168-172 (2002).