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SYHN: Hybrid nanostructures

SYHN 1: Hybrid Nanostructures

SYHN 1.2: Hauptvortrag

Donnerstag, 27. März 2003, 10:10–10:50, HSZ/01

Spin related transport and devices based on the Rashba effect — •Junsaku Nitta^1,2 and Takaaki Koga^1,3 — ¹NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan — ²CREST, Japan Science and Technology — ³PRESTO, Japan Science and Technology

The Rashba spin-orbit interaction in InGaAs quantum wells is studied using the weak anti-localization analysis as a function of the structural inversion asymmetry. We have observed a clear cross-over from positive to negative magnetoresistance near zero magnetic field by controlling the degree of the structural inversion asymmetry in the quantum wells. This is a strong evidence of a zero-field spin splitting that is induced by the Rashba effect. The spin interference effect in a gate controlled mesoscopic Aharonov-Bohm ring structure is investigated in the presence of Rashba spin-orbit interaction. The oscillatory behavior that appears in ensemble averaged Fourier spectra of h/2e oscillations as a function of gate voltage is possibly due to the Aharonov-Casher type interference. We propose a spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode structure.