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SYHN: Hybrid nanostructures

SYHN 1: Hybrid Nanostructures

SYHN 1.4: Hauptvortrag

Donnerstag, 27. März 2003, 11:15–11:40, HSZ/01

Electron transport in ferromagnet/InAs hybrid devices — •Guido Meier — Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg

The idea of all electrical spin injection, spin transport, and spin detection in a solid state device was published by Datta and Das more than a decade ago [1]. Since then major advances in the injection of spin polarized electrons into semiconductors have been achieved. However, spin polarization in the semiconductor is still most commonly detected by the degree of circular polarization of light emerging from an integrated light emitting diode. All electrical spin-polarized transport revealed only injection rates in the sub-percent regime. Possible solutions are barriers between ferromagnet and two-dimensional electron system or epitaxial ferromagnet/semiconductor-interfaces. For the latter virtually 100 % spin-injection efficiency is predicted. Experimentally this requires molecular-beam epitaxy of metals on semiconductors. In the talk I give a summary of recent transport experiments and discuss resistance effects in ferromagnet/semiconductor-hybrid devices.
I thank T. Matsuyama, D. Grundler, C.-M. Hu, and Ch. Heyn for the excellent collaboration. This work is supported by the DFG via SFB 508 and the Graduiertenkolleg ’Nanostrukturierte Festkörper’, by the BMBF via grant 13N8283, and by the NEDO joint research program.

[1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).