Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

SYMN: Metallic nanowires

SYMN 1: Metallic nanowires I

SYMN 1.2: Hauptvortrag

Freitag, 28. März 2003, 10:00–10:30, HSZ/01

Self-assembled Semiconductor Nanostructures studied with STM and Synchrotron Surface X-ray Diffraction — •Robert L. Johnson¹, O. Bunk², G. Falkenberg³, and C. Kumpf⁴ — ¹Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany — ²Risoe National Laboratory — ³HASYLAB — ⁴Universität Würzburg

Nanostructured semiconductor surfaces can be fabricated by the controlled deposition of metal atoms. Indium adsorbed on Ge(001) surfaces produces regular uniform arrays of {103}-facets with 6 nm periodicity. Such nanostructured surfaces provide templates for fabricating nanowires. The atomic-scale linear arrays of metal atoms found in metal-induced reconstructions on semiconductor surfaces are particularly interesting because they are both very small and robust. In this presentation the complementarity of the information provided by scanning tunneling microscopy and x-ray diffraction to reveal the detailed atomic structure of nanowires on silicon will be described.