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TT: Tiefe Temperaturen
TT 20: Postersitzung IV (Mesoskopische Systeme, Supraleitung: Massivmaterialien, Bandleiter, Pinning, Vortexdynamik, Transporteigenschaften, Korngrenzen)
TT 20.49: Poster
Donnerstag, 27. März 2003, 14:30–19:00, P2c, P2d
Electrical resistivity of TlxV6S8 and InV6S8 under pressure — •C.F. Miclea1, H.D. Hochheimer2, T. Ohtani3, G. Sparn1, and F. Steglich1 — 1Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany — 2Department of Physics, Colorado State University, Fort Collins, CO 8052,USA — 3Laboratory for Solid State Chemistry, Okayama University of Science, Ridai-cho 1-1, Okayama
The quasi-one-dimensional systems TlxV6S8 (x=0.1, 0.15, 0.24, 0.48 and 1) and InV6S8, at normal pressure, show superconductivity (Tc≈ 4 K in both types of compounds)[1,2] and a second phase transition of yet unidentified nature at high temperatures (Th≈170K for TlxV6S8 and Th≈160K for InV6S8)[3]. In order to investigate the superconductivity and the nature of this second phase transition, 4 probe AC resistivity measurements were performed up to p=3 GPa and in the temperature range of 1.8<T<300K, both while cooling down and warming up.
Though this second phase transition is more pronounced in the InV6S8 compound than in TlxV6S8, in both cases the temperature dependence of resistivity displays a clear thermal hysteresis indicating a first order phase transition.
While Tc remains almost unchanged with increasing pressure, Th is shifted to lower temperatures and the hysteresis is suppressed.
[1] W. Bensch, et all., Mater. Res. Bull. 30 (1995) 1217.
[2] W. Bensch, et all., Solid State Commun. 93 (1995) 261.
[3] T. Ohtani, et all.,Solid State Commun 120 (2001) 95.