Dresden 2003 – scientific programme

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TT: Tiefe Temperaturen

TT 22: Metall-Isolator-Überg
änge in Quantensystemen II

TT 22.9: Talk

Friday, March 28, 2003, 12:15–12:30, HSZ301

Microwave Conductivity of Si:P in the Hopping Regime — •Marc Scheffler and Martin Dressel — 1. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart

Si:P is a protypical example of a system with localized electronic states dominating the conductivity at low temperatures via hopping. While the dc conductivity of Si:P was studied in great depth the ac conductivity still remains to be explored in detail. A recently developed cryogenic broadband microwave spectrometer employing the Corbino geometry allows us to measure the conductivity in the GHz frequency range down to liquid helium temperatures. We present frequency-dependent conductivity data taken on highly doped but still insulating Si:P in the hopping regime and compare it to the established theories of hopping conduction in localized systems.