Hannover 2003 – scientific programme

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Q: Quantenoptik

Q 53: Photonik in komplexen Strukturen

Q 53.1: Talk

Friday, March 28, 2003, 14:00–14:15, F142

Self-assembled photonic crystals in Si and III-V compounds by electrochemical pore etching — •Stefan Lölkes, Sergiu Langa, Jürgen Carstensen, and Helmut Föll — Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Kaiserstr. 2, 24143 Kiel

Electrochemically etched pores have proven to be a very successful photonic crystal (PC) model system [1] of air rods in a dielectric matrix. By using customized electrolytes very smooth pores with huge aspect ratios can be obtained. Ordering can be either introduced by lithography or by self-organization, e.g. in InP [2]. We report on further improvements on self-assembled pore monocrystals. A special focus will be laid on submicron macropores in silicon. Those are very hard to achieve by the conventional growth techniques. Using a self assembly technique we could fabricate close-packed structures with pore diameters around 500 nm and below. The optical quality was analyzed by FTIR reflection measurements and SEM. In the second part, we will present recent results on full 3D PBG PC using Yablonovite-like pore networks [3] in Si including first optical measurements.

[1] Müller, F., Birner A., Gösele, U., Lehmann, V., Ottow, S., Föll, H., J. of Porous Mat. 7 (2000) 201.

[2] S. Langa, I.M. Tiginyanu, M. Christophersen, J. Carstensen, and H.Föll, APL (2002) in print.

[3] Christophersen, M., Carstensen, J., Feuerhake, A., and Föll, H., Mat. Sci B 69-70 (2000).