Kiel 2004 – wissenschaftliches Programm
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P: Plasmaphysik
P 20: Diagnostische Methoden V, Niedertemperaturplasmen Plasmatechnologie IV
P 20.3: Fachvortrag
Donnerstag, 11. März 2004, 11:30–11:50, H\"orsaal H
Semiconductor-Gas Discharge Infrared Image Converter with a Microstructured Gas Discharge Layer — •Valery M. Marchenko1, Leonid M. Portsel1,2, and Hans-Georg Purwins1 — 1Institute of Applied Physics, Münster University, Germany — 2A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia
The converter consists of a high-ohmic Si:Zn wafer sensitive in a 1.1–3.5 µm spectral band and an adjacent micro capillary plate (MCP) followed by an output window with an Indium Tin Oxide electrode from the side directed to the MCP. Such a converter cell, filled with an appropriate gas, is cooled down to 80–90 K and fed from a high voltage supply. An incoming IR image modulates the Si:Zn wafer resistivity and thereby controls the discharge brightness in the MCP pores, creating a visible output image.
Experimental results are presented for 300 µm thick MCPs with a pore diameter as small as 100, 50 and 20 µm, and Ar as a filling gas under pressure varied from 20 to 200 hPa. For all three MCP options, conditions of the device stable operation have been found. As shown, fine enough structuring the gas discharge layer can considerably enhance spatial resolution as compared with that for a homogeneous gas layer. This is achieved by preventing both lateral diffusion of discharge particles and propagation of resonance radiation.
Beside the spatial resolution, breakdown voltage and output brightness have been estimated and compared with those for a homogeneous gas gap.