Mainz 2004 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
T: Teilchenphysik
T 601: Halbleiterdetektoren VII
T 601.6: Vortrag
Donnerstag, 1. April 2004, 11:55–12:10, RW 3
Development of a low noise analog readout for a DEPFET detector with continuous clear mechanism — •Adrian Niculae1, Martin Holder1, Gerhard Lutz2, Rainer Richter2, and Peter Klein2 — 1University of Siegen, Walter-Flex-Str. 3, D-57068 Siegen — 2Semiconductor Laboratory of MPI for Extraterrestrial Physics, Otto-Hahn-Ring 6, D-81739 München
The DEPFET pixel detector consists of a FET transistor integrated on a fully depleted silicon substrate. Signal charges generated in the detector substrate are collected underneath the transistor channel and modulate directly the transistor current. This internal amplification mechanism ensures low noise, even at room temperature. The DEPFET device presented in this contribution is based on a JFET transistor; the signal charge is cleared out of the transistor internal gate by means of a continuous clear mechanism. The detector is thus permanently sensitive to incident particles. A low-noise CMOS analog readout circuit for the DEPFET pixel detector with continuous clear mechanism is described. Energy measurements with 55Fe and 109Cd x-ray sources are presented. An electronic noise of about 13 e− has been measured at room temperature, comparable to the Fano noise at 6 keV.