Regensburg 2004 – scientific programme
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DF: Dielektrische Festkörper
DF 5: Poster
DF 5.3: Poster
Wednesday, March 10, 2004, 14:30–18:00, Poster C
Wet chemical deposition of semiconducting materials into porous Al2O3 — •L. Nosova1,2, A. Belaidi1, T. Guminskaya1, S. Gavrilov3, R. Bayon1, I. Sieber1, V. Timoshenko4, I. Urban5, N. Grigorieva1,6, and Th. Dittrich1 — 1Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany — 2permanent address: Heat Physics Department, Uzbek Academy of Sciences, 700135 Tashkent, Uzbekistan — 3Moscow Institute of Electronic Engineering — 4M. V. Lomonosov Moscow State University, Physics Department, 119899 Moscow, Russia — 5Bundesanstalt für Materialforschung, Unter den Eichen 87, D-12205 Berlin — 6permanent address: St. Petersburg State University, Department of Solid State Physics, Ulyanovskaya 1, 198504 St. Petersburg, Russia
Porous Al2O3 with ordered pores is prepared by two-step anodization. Different deposition techniques (successive ion layer adsorption reaction, chemical bath deposition, ion layer gas reaction, electrochemical deposition) are used to deposit semiconducting materials as CdS, PbS, CuO, CuxS, ZnO into pores with diameters between 20 and 200 nm. The samples are characterized by secondary and transmission electron microscopy, infrared spectroscopy, optical transmittance and photovoltage techniques. The different deposition techniques are evaluated with respect to the quality of the prepared nanocomposites.