Regensburg 2004 – scientific programme

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DF: Dielektrische Festkörper

DF 6: Nanostrukturen, Schichten und Keramiken

DF 6.5: Talk

Thursday, March 11, 2004, 11:30–11:50, H11

Infrared near-field microscopy of focused ion beam patterned SiC — •Nenad Ocelic and Rainer Hillenbrand — Nano-Photonics Group, Max-Planck-Institut für Biochemie, 82152 Martinsried

We used a home-built scattering-type (or apertureless) scanning near-field infrared microscope (s-SNIM) to study the local dielectric properties of a SiC surface patterned by focused ion beam implantation with spatial resolution of less than 100nm. In our experiment the sharp probing tip of an atomic force microscope (AFM) is illuminated by infrared light from a CO₂ laser and both the amplitude and phase of backscattered light are detected.

Tuning the laser between λ=10.6µ m and λ = 11.2µ m, we found phonon-polariton resonance of the tip-sample near-field interaction [1] whose magnitude and spectral position strongly depend on the sample’s local dielectric function є(λ). Since є(λ) depends on the local crystal structure, we can differentiate between crystalline SiC and amorphous SiC regions produced by implantation, as well as the transition regions between them. Thus, our method could be used to map radiation damage caused by the implantation process employed for semiconductor doping or to study crystal defects in thin film growth.

[1] R.Hillenbrand, T.Taubner, F.Keilmann, Nature, 418, 159-162 (2002)