Regensburg 2004 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 1: Ionenimplantation I

DS 1.5: Vortrag

Montag, 8. März 2004, 10:30–10:45, HS 31

Damage formation and annealing in InP due to swift heavy ions — •Andrey Kamarou, Werner Wesch, and Elke Wendler — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena

Indium phosphide (InP) is a much promising material suitable for various electronic and optoelectronic applications [1-3]. However, the effects of the increasing electronic energy deposition in InP are not studied very well if one moves from conventional ion energies to MeV ions which are widely used for a device-device and active layer-substrate electrical isolation as well as for quantum well intermixing.

We irradiated pre-damaged as well as virgin InP samples with 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. We have registered both a relatively weak effect of the damage accumulation in virgin InP and a very significant defect annealing in the pre-damaged InP due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is a much more efficient process with respect to damage formation as compared to 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe and 600 MeV Au irradiation does hardly occur. At liquid nitrogen temperature InP appears to be much more radiation-resistant to 390 MeV Xe than at room temperature.

[1] D. Streit, in Compound Semiconductors, May 2002.

[2] B. Humphreys and A. O.Donell, in Compound Semiconductors, August 2003.

[3] D. Lammers, in Electronic Engineering Times, September, 12, 2002.