Regensburg 2004 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

DS: Dünne Schichten

DS 15: Oberfl
ächenmodifizierung

DS 15.1: Talk

Wednesday, March 10, 2004, 16:15–16:30, HS 32

Self-organized pattern formation on Si surfaces by ion beam erosion — •Bashkim Ziberi, Frank Frost, and Bernd Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstraße 15, D-04318 Leipzig, Germany

The spontaneous formation of regular structures with nanometer dimensions (< 100 nm) on semiconductor surfaces originates from self-organisation processes during ion beam erosion and offers a promising tool for the fabrication of large-area nanostructured surfaces.

In this study the self-organized pattern formation on Si surfaces during low-energy Ar⁺ ion beam erosion (ion energy ≤ 2000 eV) under normal and oblique ion incidence with and without sample rotation was investigated. It is shown that ordered nanodots are formed at normal ion incidence for ion energies ≥ 1000 eV and, additionally, for ion energies ≤ 2000 eV at oblique ion incidence angles between 70^∘ and 80^∘ with respect to the surface normal. The dots generated under oblique ion incidence conditions show a remarkable high degree of ordering comparable to dot patterns on III/V semiconductors. In the case of no sample rotation remarkable highly ordered ripple patterns can be produced at ion incidence angles slightly deviating from normal ion incidence.