Regensburg 2004 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 16: Schichtherstellung I

DS 16.1: Hauptvortrag

Donnerstag, 11. März 2004, 14:30–15:15, HS 31

Plasma-assisted deposition and crystal growth of thin metal oxide films — •Rainer Hippler — Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, Domstraße 10a, 17489 Greifswald

Metal oxide films are of significant technological relevance and play an important role, e.g., as protective coatings and in the fabrication of solar cells. Plasma-assisted deposition employing magnetron discharges are frequently employed. Formation and crystal growth of, e.g., indium tin oxide (ITO) films show pronounced dependencies on plasma parameters. The influence on chemical composition, crystal structure, density, etc., as well as possible reasons will be discussed.