Regensburg 2004 – scientific programme

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DS: Dünne Schichten

DS 22: Postersitzung

DS 22.12: Poster

Tuesday, March 9, 2004, 14:30–17:00, Poster B

Neon ion sputtering of Si(111) — •Stefan Krischok, Vasil Yanev, Annette Läffert, Henry Romanus, Ronny Wagner, Rastislav Kosiba, Gernot Ecke, Oliver Ambacher, and Juergen A. Schaefer — Zentrum für Mikro- und Nanotechnologien, TU Ilmenau, 98693 Ilmenau

The bombardment of surfaces with ions of high kinetic energy is often used for surface cleaning under ultra high vacuum (UHV) conditions. However, many effects like changes in the chemical surface composition, amorphization or the incorporation of incoming ions may occur. We have studied the incorporation of neon into Si(111) using neon ions with a kinetic energy of 500 and 5000eV and an incident angle of 45^∘ with respect to the surface normal. The ion bombarded surfaces were investigated by X-ray photoelectron spectroscopy (XPS, Mg Kα), thermal desorption spectroscopy (TDS) and transmission electron microscopy (TEM). In both cases Ne is incorporated into the silicon as shown by XPS. The observed Ne(1s) line is splitted into two peaks. They show a strong dependence on the kinetic energy of the Ne ions. The two observed Ne states are discussed on the basis of our XPS, TDS and TEM data.