Regensburg 2004 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Dünne Schichten
DS 22: Postersitzung
DS 22.17: Poster
Dienstag, 9. März 2004, 14:30–17:00, Poster B
Reactive plasma jet etching of Si - Gas flow models and mass spectrometry — •Thomas Arnold1, Sergey Grabovski2, Axel Schindler1, and Hans-Erich Wagner2 — 1Leibniz-Institut für Oberflächenmodifizierung e.V. Leipzig — 2Ernst-Moritz-Arndt-Universität Greifswald
A low pressure microwave driven reactive Ar/SF6 plasma jet used for high rate etching of Si and SiO2 is investigated by appearance potential mass spectrometry (APMS) and electron attachment mass spectrometry (EAMS). Spatially resolved measurements of neutral radicals and stable products in the active and passive plasma region have been accomplished. The concentration of atomic fluorine was determined for different process parameters such as gas mixture and microwave power. The experimental results are compared to a previously built gas phase reaction kinetics model, which considers the formation of reactive F and F− radicals and the production of SFx and SFx− by electron impact, electron attachment and significant reverse processes. Two-dimensional computational fluid dynamics simulations of a simplified plasma jet model are compared to the experimentally obtained species concentrations on a substrate surface. Additionally, results of surface analysis of etched Si substrates by means of XPS and optical profilers are presented.